We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed.
@article{arxiv.2110.08366,
title = {Unity yield of deterministically positioned quantum dot single photon sources},
author = {Patrick Laferrière and Edith Yeung and Isabelle Miron and David B. Northeast and Sofiane Haffouz and Jean Lapointe and Marek Korkusinski and Philip J. Poole and Robin L. Williams and Dan Dalacu},
journal= {arXiv preprint arXiv:2110.08366},
year = {2021}
}