Transmission through multiple Mott insulator - semiconductor wells
Abstract
Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasi-particle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.
Cite
@article{arxiv.2502.20074,
title = {Transmission through multiple Mott insulator - semiconductor wells},
author = {Jan Verlage and Peter Kratzer},
journal= {arXiv preprint arXiv:2502.20074},
year = {2025}
}