The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied.
@article{arxiv.1110.5086,
title = {Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency},
author = {Y. D. Glinka and N. H. Tolk and J. K. Furdyna},
journal= {arXiv preprint arXiv:1110.5086},
year = {2015}
}