Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maximum relaxation time of 160 ms at low field, a strong spin-valley relaxation hotspot at intermediate fields, and a B^4 scaling at high fields. T_1 is found to decrease with lattice temperature T_lat as well as with added electrical noise. In comparison, samples without micromagnets have a significantly longer T_1. Optimization of the micromagnet design, combined with reductions in charge noise and electron temperature, may further extend T_1 in devices with large magnetic field gradients.
@article{arxiv.1811.00848,
title = {Single-Spin Relaxation in a Synthetic Spin-Orbit Field},
author = {F. Borjans and D. M. Zajac and T. M. Hazard and J. R. Petta},
journal= {arXiv preprint arXiv:1811.00848},
year = {2019}
}