Semiconductor-based selective emitter with sharp cutoff for thermophotovoltaic energy conversion
Abstract
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and backside metal coating is studied here for thermophotovoltaic (TPV) energy conversion. Optical simulation predicts the spectral emittance above 0.9 in the wavelengths from 1 to 1.85 um and below 0.2 in the sub-bandgap range with sharp cutoff around the bandgap, indicating superior spectral selectivity behavior. This is confirmed by excellent agreement with indirectly measured spectral emittance of the fabricated Ge-based selective emitter sample. Furthermore, the TPV efficiency by paring the Ge-based selective emitter with a GaSb cell is theoretically analyzed at different temperatures. This work will facilitate the development of the semiconductor-based selective emitters for enhancing TPV performance.
Cite
@article{arxiv.2104.11885,
title = {Semiconductor-based selective emitter with sharp cutoff for thermophotovoltaic energy conversion},
author = {Qing Ni and Rajagopalan Ramesh and Cheng-An Chen and Liping Wang},
journal= {arXiv preprint arXiv:2104.11885},
year = {2021}
}