Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer
Quantum Gases
2014-10-24 v3
Abstract
The formation of the roton-maxon excitation spectrum and the roton instability effect for a weakly correlated Bose gas of dipolar excitons in a semiconductor layer are predicted. The stability diagram is calculated. According to our numerical estimations, the threshold of the roton instability for Bose-Einstein condensed exciton gas with roton-maxon spectrum is achievable experimentally, e.g., in GaAs semiconductor layers.
Cite
@article{arxiv.1403.3956,
title = {Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer},
author = {A. K. Fedorov and I. L. Kurbakov and Yu. E. Lozovik},
journal= {arXiv preprint arXiv:1403.3956},
year = {2014}
}
Comments
9 pages, 3 figures; published version