Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr3) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr3 thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr3 thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr_}, with a low ASE threshold of 14.5 μJcm−2 under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si3N4) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr3 thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm−2 at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications.
@article{arxiv.2412.15245,
title = {Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform},
author = {Federico Fabrizi and Piotr J. Cegielski and Saeed Goudarzi and Naho Kurahashi and Manuel Runkel and Cedric Kreusel and Bartos Chmielak and Stephan Suckow and Thomas Riedl and Surendra B. Anantharaman and Maryam Mohammadi and Max C. Lemme},
journal= {arXiv preprint arXiv:2412.15245},
year = {2024}
}