Replenish and relax: explaining logarithmic annealing in disordered materials
Abstract
Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations.
Cite
@article{arxiv.1304.2991,
title = {Replenish and relax: explaining logarithmic annealing in disordered materials},
author = {Laurent Karim Béland and Yonathan Anahory and Dries Smeets and Matthieu Guihard and Peter Brommer and Jean-François Joly and Jean-Christophe Pothier and Laurent J. Lewis and Normand Mousseau and François Schiettekatte},
journal= {arXiv preprint arXiv:1304.2991},
year = {2013}
}