English

Quantum Magnetism in Wannier-Obstructed Mott Insulators

Strongly Correlated Electrons 2025-12-03 v1 Mesoscale and Nanoscale Physics

Abstract

We develop a strong coupling approach towards quantum magnetism in Mott insulators for Wannier obstructed bands. Despite the lack of Wannier orbitals, electrons can still singly occupy a set of exponentially-localized but nonorthogonal orbitals to minimize the repulsive interaction energy. We develop a systematic method to establish an effective spin model from the electron Hamiltonian using a diagrammatic approach. The nonorthogonality of the Mott basis gives rise to multiple new channels of spin-exchange (or permutation) interactions beyond Hartree-Fock and superexchange terms. We apply this approach to a Kagome lattice model of interacting electrons in Wannier obstructed bands (including both Chern bands and fragile topological bands). Due to the orbital nonorthogonality, as parameterized by the nearest neighbor orbital overlap gg, this model exhibits stable ferromagnetism up to a finite bandwidth WUgW\sim U g, where UU is the interaction strength. This provides an explanation for the experimentally observed robust ferromagnetism in Wannier obstructed bands. The effective spin model constructed through our approach also opens up the possibility for frustrated quantum magnetism around the ferromagnet-antiferromagnet crossover in Wannier obstructed bands.

Keywords

Cite

@article{arxiv.2005.01439,
  title  = {Quantum Magnetism in Wannier-Obstructed Mott Insulators},
  author = {Xiao-Yang Huang and Taige Wang and Shang Liu and Hong-Ye Hu and Yi-Zhuang You},
  journal= {arXiv preprint arXiv:2005.01439},
  year   = {2025}
}

Comments

21 pages, 11 figures

R2 v1 2026-06-23T15:17:25.966Z