English

Optical quantum memory for polarization qubits with V-type three-level atoms

Quantum Physics 2012-04-13 v1

Abstract

We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening (CRIB) technique. We theoretically show the possibility to store and retrieve a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit - a single photon in an arbitrary polarization state - without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analyzed.

Keywords

Cite

@article{arxiv.1112.6112,
  title  = {Optical quantum memory for polarization qubits with V-type three-level atoms},
  author = {D. Viscor and A. Ferraro and Yu. Loiko and R. Corbalán and J. Mompart and V. Ahufinger},
  journal= {arXiv preprint arXiv:1112.6112},
  year   = {2012}
}
R2 v1 2026-06-21T19:57:39.042Z