On the Debye Effect in a Semiconductor and an Electrolyte
Materials Science
2007-05-23 v2
Abstract
It is shown that the standard expression for the diffusive flux in a semiconductor can be transformed to the flux from the Einstein-Smoluchowski equation after making use of the "Einstein identities". Later, it is possible to use a transformation introduced in: S. Piekarski: "On the modified Fick law and its potential applications" (J.Tech.Phys.,44,2,125-131,2003). In this formalism, it is possible to formulate simple models of a semiconductor and an electrolyte and to obtain the alternative description of a Debye effect (by the Debye effect we mean here the screening of the point particle potential). Final results are compared with the standard analysis.
Keywords
Cite
@article{arxiv.cond-mat/0403758,
title = {On the Debye Effect in a Semiconductor and an Electrolyte},
author = {S. Piekarski},
journal= {arXiv preprint arXiv:cond-mat/0403758},
year = {2007}
}
Comments
15 pages, no figures