Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT
Abstract
We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few W. In this context the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs, and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.
Keywords
Cite
@article{arxiv.1506.04884,
title = {Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT},
author = {S. D'Ambrosio and M. Meissner and C. Blanc and A. Ronzani and F. Giazotto},
journal= {arXiv preprint arXiv:1506.04884},
year = {2015}
}
Comments
5 pages, 4 color figures