By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.
@article{arxiv.1602.07524,
title = {Microwave-induced resistance oscillations as a classical memory effect},
author = {Y. M. Beltukov and M. I. Dyakonov},
journal= {arXiv preprint arXiv:1602.07524},
year = {2016}
}