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Laser-engineered $\Gamma$-point Topology in Trigonal Bismuthene

Mesoscale and Nanoscale Physics 2025-09-12 v2 Materials Science

Abstract

The Γ\Gamma-point topology represents a significant segment in the family of topological insulators. Here we provide a comprehensive prediction of light-induced Γ\Gamma-point-based topological manipulation in trigonal bismuthene and its derivatives. Our findings unveil a two-stage process of topological phase transitions (TPT) as the laser intensity increases. Initially, a quantum-spin-Hall or metallic state transitions to a quantum-anomalous-Hall (QAH) state (CC = ±\pm3), followed by another TPT that yields a compensated Chern-insulating state (CC = 0). The trigonal warping model accounts for these states, describing the C3zC_{3z}-rotational band-inversion process, which is determined by ±\pm1 orders of replica bands. Notably, this high Chern-number QAH state persists over a broad range of laser parameters, maintaining functionality beyond room temperature as evidenced by the large global gaps (\geq 60 meV). Our work provides a comprehensive roadmap towards the designer Γ\Gamma-point topology under laser excitation, facilitating applications of artificial topological materials.

Keywords

Cite

@article{arxiv.2509.08068,
  title  = {Laser-engineered $\Gamma$-point Topology in Trigonal Bismuthene},
  author = {Zhe Li and Haijun Cao and Sheng Meng},
  journal= {arXiv preprint arXiv:2509.08068},
  year   = {2025}
}
R2 v1 2026-07-01T05:29:03.227Z