High-Q nanocavities in semiconductor-based three-dimensional photonic crystals
Optics
2018-09-28 v1
Abstract
We experimentally demonstrated high quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4-times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, we successfully observed a lasing oscillation from this cavity mode.
Cite
@article{arxiv.1809.09967,
title = {High-Q nanocavities in semiconductor-based three-dimensional photonic crystals},
author = {S. Takahashi and T. Tajiri and K. Watanabe and Y. Ota and S. Iwamoto and Y. Arakawa},
journal= {arXiv preprint arXiv:1809.09967},
year = {2018}
}
Comments
2 pages, 3 figures