High-harmonic generation in GaAs beyond the perturbative regime
Mesoscale and Nanoscale Physics
2021-10-04 v1 Materials Science
Abstract
We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.
Keywords
Cite
@article{arxiv.2004.04492,
title = {High-harmonic generation in GaAs beyond the perturbative regime},
author = {Peiyu Xia and Tomohiro Tamaya and Changsu Kim and Faming Lu and Teruto Kanai and Nobuhisa Ishii and Jiro Itatani and Hidefumi Akiyama and Takeo Kato},
journal= {arXiv preprint arXiv:2004.04492},
year = {2021}
}
Comments
16 pages, 9 figures