English

Hall effect in cobalt-doped TiO$_{2-\delta}$

Condensed Matter 2009-11-10 v1

Abstract

We report Hall effect measurements on thin films of cobalt-doped TiO2δ_{2-\delta}. Films with low carrier concentrations (1018^{18} - 1019^{19}) yield a linear behavior in the Hall data while those having higher carrier concentrations (1021^{21} - 1022^{22}) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO2_{2} to Ti_[n}O2n1_{2n-1} Magneli phase(s).

Keywords

Cite

@article{arxiv.cond-mat/0311041,
  title  = {Hall effect in cobalt-doped TiO$_{2-\delta}$},
  author = {J. S. Higgins and S. R. Shinde and S. B. Ogale and T. Venkatesan and R. L. Greene},
  journal= {arXiv preprint arXiv:cond-mat/0311041},
  year   = {2009}
}
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