Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a generalization of the concept of in-memory Scouting Logic, and we demonstrate it experimentally with up to 16 parallel devices (operands), a new milestone for RRAM in-memory logic. Moreover, we combine IMC with Multi-Level-Cell programming and demonstrate experimentally, for the first time, an IMC RRAM-based MLC 2-bit adder.
@article{arxiv.2203.01680,
title = {Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations},
author = {E. Esmanhotto and T. Hirtzlin and N. Castellani and S. Martin and B. Giraud and F. Andrieu and J. F. Nodin and D. Querlioz and J-M. Portal and E. Vianello},
journal= {arXiv preprint arXiv:2203.01680},
year = {2022}
}