English

Exciton diffusion in amorphous organic semiconductors: reducing simulation overheads with machine learning

Materials Science 2023-06-07 v1

Abstract

Simulations of exciton and charge hopping in amorphous organic materials involve numerous physical parameters. Each of these parameters must be computed from costly ab initio calculations before the simulation can commence, resulting in a significant computational overhead for studying exciton diffusion, especially in large and complex material datasets. While the idea of using machine learning to quickly predict these parameters has been explored previously, typical machine learning models require long training times which ultimately contribute to simulation overheads. In this paper, we present a new machine learning architecture for building predictive models for intermolecular exciton coupling parameters. Our architecture is designed in such a way that the total training time is reduced compared to ordinary Gaussian process regression or kernel ridge regression models. Based on this architecture, we build a predictive model and use it to estimate the coupling parameters which enter into an exciton hopping simulation in amorphous pentacene. We show that this hopping simulation is able to achieve excellent predictions for exciton diffusion tensor elements and other properties as compared to a simulation using coupling parameters computed entirely from density functional theory. This result, along with the short training times afforded by our architecture, therefore shows how machine learning can be used to reduce the high computational overheads associated with exciton and charge diffusion simulations in amorphous organic materials.

Keywords

Cite

@article{arxiv.2301.13435,
  title  = {Exciton diffusion in amorphous organic semiconductors: reducing simulation overheads with machine learning},
  author = {Chayanit Wechwithayakhlung and Geoffrey R. Weal and Yu Kaneko and Paul A. Hume and Justin M. Hodgkiss and Daniel M. Packwood},
  journal= {arXiv preprint arXiv:2301.13435},
  year   = {2023}
}

Comments

29 pages. Supporting information starts on page 26

R2 v1 2026-06-28T08:27:41.527Z