English

Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Mesoscale and Nanoscale Physics 2020-07-15 v1 Materials Science

Abstract

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-P\'{e}rot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics to encompass materials that exhibit band inversion and hybridization, with the promise to surpass the performance of current state-of-the-art devices.

Keywords

Cite

@article{arxiv.1911.00424,
  title  = {Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer},
  author = {Matija Karalic and Antonio Štrkalj and Michele Masseroni and Wei Chen and Christopher Mittag and Thomas Tschirky and Werner Wegscheider and Thomas Ihn and Klaus Ensslin and Oded Zilberberg},
  journal= {arXiv preprint arXiv:1911.00424},
  year   = {2020}
}

Comments

7 pages, 3 figures + supplemental material (24 pages, 14 figures), comments are welcome

R2 v1 2026-06-23T12:02:20.966Z