The recent discovery of magnetic ordering in two-dimension has lead to colossal efforts to find atomically thin materials that order at high temperatures. However, due to fundamental spin fluctuation in reduced dimension, the room-temperature ferromagnetism remains elusive. Here, we report a dramatic manipulation of magnetic ordering up to room temperature in the monolayer CrBr3, within the first-principles Heisenberg XXZ model. The exchange and anisotropic magnetic interactions are externally modulated by a gate-induced charge carrier doping that triggers a nontrivial phase diagram. High-temperature ferromagnetism is associated with a substantial increase in both effective ferromagnetic exchange and overall magnetic anisotropy under experimentally attainable hole doping. In contrast, electron doping quickly switches the magnetic easy axis. The gate-tuneable room temperature ferromagnetism in CrBr3 presents new possibilities in electrically controlled spintronic and magnetoelectric devices based on atomically thin crystals.
@article{arxiv.2108.00684,
title = {Electrically tunable room-temperature ferromagnetism in CrBr$_3$},
author = {Chandan K. Singh and Mukul Kabir},
journal= {arXiv preprint arXiv:2108.00684},
year = {2023}
}