Disorder effects in diluted ferromagnetic semiconductors
Abstract
Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range exchange integrals and the Curie temperature as a function of the exchange parameter, magnetic impurity concentration and carrier density. The effect of the disorder (impurity scattering) appears to play a crucial role. The standard RKKY calculation (no scattering processes), strongly underestimate the Curie temperature and is inappropriate to describe magnetism in diluted magnetic semi-conductors. It is also shown that an antiferromagnetic exchange favors higher Curie temperature.
Keywords
Cite
@article{arxiv.cond-mat/0208596,
title = {Disorder effects in diluted ferromagnetic semiconductors},
author = {G. Bouzerar and J. Kudrnovsky and P. Bruno},
journal= {arXiv preprint arXiv:cond-mat/0208596},
year = {2009}
}
Comments
tex file + 4 .eps figures are included. submited to PRL