Emerging classical and quantum device concepts demand precise spatial control over the optoelectronic properties of two-dimensional (2D) materials, but deterministic engineering via local multiaxial strain distributions remains challenging. Using Ga2Se2, we demonstrate a material-agnostic platform in which nanostructure geometry deterministically prescribes in-plane strain profiles in suspended van der Waals membranes. We first use hyperspectral photoluminescence mapping and experimentally-constrained finite element analysis to quantify the experimental biaxial and uniaxial strain gauge factors that relate strain to the change in bandgap. We next show that a two-component analytical model can predict, with less than 12% error, spatially-resolved bandgap shifts arising from multiaxial strain distributions in complex geometries, including the interactions between adjacent nanostructures. Finally, we demonstrate that this approach can be extended to other materials. The results demonstrate that nanostructure design provides a quantitative, deterministic framework for the realization of designed strain and bandgap distributions in 2D materials.
@article{arxiv.2605.01465,
title = {Deterministic Realization of Complex Local Strain Fields and Bandgap Profiles in Two-Dimensional Materials},
author = {Lottie L. Murray and Eric Herrmann and Igor Evangelista and Sai Rahul Sitaram and Ke Ma and Anderson Janotti and Xi Wang and Matthew F. Doty},
journal= {arXiv preprint arXiv:2605.01465},
year = {2026}
}
Comments
arXiv admin note: substantial text overlap with arXiv:2601.08984