Desynchronization in multilayer p-i-n drift step recovery diode
Plasma Physics
2025-04-30 v1 Materials Science
Applied Physics
Instrumentation and Detectors
Abstract
The impact semiconductor drift step recovery diodes (DSRDs) can have on high-power microwave applications make them a device of interest for future solid-state electronics. However, there is little known about their functionality and degradation under over-voltaging or high average power dissipation conditions that could therefore hinder their continual design and optimization toward better performance. The experiments on a Si seven layer DSRD conducted in the present paper allowed to broaden the understanding of its opening switching performance under over-voltaging conditions. A striking desynchronization was discovered and linked to junction and electro-neutral region damage through experiments and PSpice modelling.
Cite
@article{arxiv.2504.20796,
title = {Desynchronization in multilayer p-i-n drift step recovery diode},
author = {Jorge Pena Lozano and Kindred Griffis and Dimash Aimurzayev and Gregory Wierzba and Sergey V. Baryshev},
journal= {arXiv preprint arXiv:2504.20796},
year = {2025}
}