DDC-PIM: Efficient Algorithm/Architecture Co-design for Doubling Data Capacity of SRAM-based Processing-In-Memory
Abstract
Processing-in-memory (PIM), as a novel computing paradigm, provides significant performance benefits from the aspect of effective data movement reduction. SRAM-based PIM has been demonstrated as one of the most promising candidates due to its endurance and compatibility. However, the integration density of SRAM-based PIM is much lower than other non-volatile memory-based ones, due to its inherent 6T structure for storing a single bit. Within comparable area constraints, SRAM-based PIM exhibits notably lower capacity. Thus, aiming to unleash its capacity potential, we propose DDC-PIM, an efficient algorithm/architecture co-design methodology that effectively doubles the equivalent data capacity. At the algorithmic level, we propose a filter-wise complementary correlation (FCC) algorithm to obtain a bitwise complementary pair. At the architecture level, we exploit the intrinsic cross-coupled structure of 6T SRAM to store the bitwise complementary pair in their complementary states (), thereby maximizing the data capacity of each SRAM cell. The dual-broadcast input structure and reconfigurable unit support both depthwise and pointwise convolution, adhering to the requirements of various neural networks. Evaluation results show that DDC-PIM yields about speedup on MobileNetV2 and on EfficientNet-B0 with negligible accuracy loss compared with PIM baseline implementation. Compared with state-of-the-art SRAM-based PIM macros, DDC-PIM achieves up to and improvement in weight density and area efficiency, respectively.
Cite
@article{arxiv.2310.20424,
title = {DDC-PIM: Efficient Algorithm/Architecture Co-design for Doubling Data Capacity of SRAM-based Processing-In-Memory},
author = {Cenlin Duan and Jianlei Yang and Xiaolin He and Yingjie Qi and Yikun Wang and Yiou Wang and Ziyan He and Bonan Yan and Xueyan Wang and Xiaotao Jia and Weitao Pan and Weisheng Zhao},
journal= {arXiv preprint arXiv:2310.20424},
year = {2023}
}
Comments
14 pages, to be published in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD)