Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.
@article{arxiv.0910.1797,
title = {Dangling-bond charge qubit on a silicon surface},
author = {Lucian Livadaru and Peng Xue and Zahra Shaterzadeh-Yazdi and Gino A. DiLabio and Josh Mutus and Jason L. Pitters and Barry C. Sanders and Robert A. Wolkow},
journal= {arXiv preprint arXiv:0910.1797},
year = {2011}
}