English

Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A

Mesoscale and Nanoscale Physics 2019-08-23 v1 Materials Science

Abstract

A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the Bell pairs of 0.71 +- 0.015, much beyond the classical limit. The quantum nature of the emitted pairs is conserved at temperatures of up to ~65 K, and is essentially limited by the charge carrier confinement in the present dot system. Our study offers a guideline for the fabrication of quantum entangled pair sources suitable for practical use.

Keywords

Cite

@article{arxiv.1906.08454,
  title  = {Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A},
  author = {Neul Ha and Takaaki Mano and Takashi Kuroda and Yoshiki Sakuma and Kazuaki Sakoda},
  journal= {arXiv preprint arXiv:1906.08454},
  year   = {2019}
}
R2 v1 2026-06-23T09:58:40.982Z