Coulomb Engineering of two-dimensional Mott materials
Abstract
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
Cite
@article{arxiv.2001.01735,
title = {Coulomb Engineering of two-dimensional Mott materials},
author = {Erik G. C. P. van Loon and Malte Schüler and Daniel Springer and Giorgio Sangiovanni and Jan M. Tomczak and Tim O. Wehling},
journal= {arXiv preprint arXiv:2001.01735},
year = {2023}
}