Compact Stabilized Semiconductor Laser for Frequency Metrology
Abstract
We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high quality factor whispering gallery mode microresonator. The laser is characterized with residual amplitude modulation below -80 dB and frequency noise better than 300 Hz/Hz^(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation (FM) speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to Doppler-free saturated absorption resonance of 87Rb D1 line is demonstrated and frequency stability below 10^(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for realization of frequency modulatable lasers at any wavelength.
Cite
@article{arxiv.1411.4712,
title = {Compact Stabilized Semiconductor Laser for Frequency Metrology},
author = {W. Liang and V. S. Ilchenko and D. Eliyahu and E. Dale and A. A. Savchenkov and D. Seidel and A. B. Matsko and L. Maleki},
journal= {arXiv preprint arXiv:1411.4712},
year = {2015}
}
Comments
9 pages, 5 figures