Antiferromagnetic Domain Wall Engineering in Chromium Films

J. M. Logan; H. C. Kim; D. Rosenmann; Z. Cai; R. Divan; Oleg G. Shpyrko; E. D. Isaacs

doi:10.1063/1.4712598

Antiferromagnetic Domain Wall Engineering in Chromium Films

Strongly Correlated Electrons 2015-06-04 v1 Mesoscale and Nanoscale Physics

Authors: J. M. Logan , H. C. Kim , D. Rosenmann , Z. Cai , R. Divan , Oleg G. Shpyrko , E. D. Isaacs

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Abstract

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{\deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

Keywords

magnetic domain walls thin film magnetism

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@article{arxiv.1202.4401,
  title  = {Antiferromagnetic Domain Wall Engineering in Chromium Films},
  author = {J. M. Logan and H. C. Kim and D. Rosenmann and Z. Cai and R. Divan and Oleg G. Shpyrko and E. D. Isaacs},
  journal= {arXiv preprint arXiv:1202.4401},
  year   = {2015}
}

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Antiferromagnetic Domain Wall Engineering in Chromium Films

Abstract

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