Electrical control of spin dynamics in Bi2Se3 was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and Aharorov-Casher resistance oscillations against gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by gate voltage has been obtained, indicating that Bi2Se3-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.
@article{arxiv.1103.6115,
title = {Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers},
author = {Fanming Qu and Fan Yang and Jun Chen and Jie Shen and Yue Ding and Jiangbo Lu and Yuanjun Song and Huaixin Yang and Guangtong Liu and Jie Fan and Yongqing Li and Zhongqing Ji and Changli Yang and Li Lu},
journal= {arXiv preprint arXiv:1103.6115},
year = {2012}
}