Absence of Localization in Certain Field Effect Transistors

S Washburn; D Popovic; KP Li; AB Fowler

doi:10.1006/spmi.1997.0526

Absence of Localization in Certain Field Effect Transistors

Strongly Correlated Electrons 2019-08-17 v2 Disordered Systems and Neural Networks Mesoscale and Nanoscale Physics

Authors: S Washburn , D Popovic , KP Li , AB Fowler

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Abstract

We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.

Keywords

metal-insulator transition magnetoresistance spintronics

Cite

@article{arxiv.cond-mat/9710315,
  title  = {Absence of Localization in Certain Field Effect Transistors},
  author = {S Washburn and D Popovic and KP Li and AB Fowler},
  journal= {arXiv preprint arXiv:cond-mat/9710315},
  year   = {2019}
}

Comments

8 pages, LaTeX, figure label changed

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