A Transfer Hamiltonian model for devices based in quantum dot arrays
Abstract
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime.
Keywords
Cite
@article{arxiv.1207.5513,
title = {A Transfer Hamiltonian model for devices based in quantum dot arrays},
author = {S. Illera and J. D. Prades and A. Cirera and A. Cornet},
journal= {arXiv preprint arXiv:1207.5513},
year = {2012}
}
Comments
19 pages, 10 figures. arXiv admin note: text overlap with arXiv:cond-mat/0511652 by other authors