English

A single-atom quantum memory in silicon

Quantum Physics 2016-09-07 v2 Mesoscale and Nanoscale Physics

Abstract

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The 31^{31}P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31^{31}P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28^{28}Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of Fp=F_p =81±{\pm}7%, a memory fidelity (FmF_m) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

Keywords

Cite

@article{arxiv.1608.07109,
  title  = {A single-atom quantum memory in silicon},
  author = {S. Freer and S. Simmons and A. Laucht and J. T. Muhonen and J. P. Dehollain and R. Kalra and F. A. Mohiyaddin and F. Hudson and K. M. Itoh and J. C. McCallum and D. N. Jamieson and A. S. Dzurak and A. Morello},
  journal= {arXiv preprint arXiv:1608.07109},
  year   = {2016}
}

Comments

14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

R2 v1 2026-06-22T15:30:34.078Z