A silicon electromechanical photodetector
Abstract
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.
Cite
@article{arxiv.1303.3900,
title = {A silicon electromechanical photodetector},
author = {Siddharth Tallur and Sunil A. Bhave},
journal= {arXiv preprint arXiv:1303.3900},
year = {2017}
}