Related papers: Electrically addressing a single self-assembled qu…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
We study the spontaneous emission from a regular lateral array or a randomly distributed ensemble of quantum dots under strong excitation (full inversion) conditions. We focus on the similarities and differences between the cases of random…
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with…
The prospect of using light to probe or manipulate quantum materials has become an active area of interest. Here, we investigate a quantum wire -- treated as a finite-sized one-dimensional electron gas -- that is coupled to a single…
Semiconductor nanocrystals, quantum dots, are known to exhibit the quantum-confined Stark effect which reveals itself in the shift of their photoluminescence spectra in response to external electric field. It was, therefore, proposed to use…
We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform…
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…
The effect of electron correlation on the photocurrent of self-assembled InAs/InGaAs quantum dot infrared photo-detector (QDIPs) is studied. It is found that Coulomb interaction and level mixing in the many-body open system lead to double…
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy…
Single photons produced by fundamentally dissimilar physical processes will in general not be indistinguishable. We show how photons produced from a quantum dot and by parametric down-conversion in a nonlinear crystal can be manipulated to…
We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a…
We demonstrate single site addressability in a two-dimensional optical lattice with 600 nm lattice spacing. After loading a Bose-Einstein condensate in the lattice potential we use a focused electron beam to remove atoms from selected…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We investigated the possibility of using a layer of quantum dots (QDs) deposited on the microparticle surface for the measurement of the charge the microparticle acquires when immersed into a plasma. To that end, we performed the…
There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We…
Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over…