Related papers: Fast Switching Ferroelectric Materials for Acceler…
In order to design next-generation ferroelectrics, a microscopic understanding of their macroscopic properties is critical. One means to achieving an atomistic description of ferroelectric and dielectric phenomena is classical molecular…
Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase…
Among smart materials, piezoelectric materials occupy a very prominent position for sensing and actuation functions. Combined with simple or more advanced shunts, they are also proposed in various vibration mitigation schemes. However, the…
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy…
Recently, a method of ultrafast polarization switching in ferroelectrics has been suggested. The basic idea of the method is to employ the effect of self-acceleration of polarization dynamics due to a resonator feedback field. This is the…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
Here are presented the experimental results obtained with a ferrofluidic deformable mirror controlled by electro-magnet actuators. Using a step input through a single actuator we obtain a steady-state settling time of 100ms; however,…
The ability to control the structure of a crystalline solid on ultrafast timescales bears enormous potential for information storage and manipulation or generating new functional states of matter [1]. In many materials where the ultrafast…
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick…
After more than a hundred years of development, ferroelectric materials have demonstrated their strong potential to people, and more and more ferroelectric materials are being used in the research of ferroelectric transistors (FeFETs). As a…
We identify a first-order, isosymmetric transition between a ferrielectric (FiE) and ferroelectric (FE) state in $A$-site ordered LaScO$_{3}$/BiScO$_{3}$ and LaInO$_{3}$/BiInO$_{3}$ superlattices. Such a previously unreported ferroic…
We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric…
A beta-ray detecting nuclear quadrupole resonance system has been developed at NSCL/MSU to measure ground-state electric quadrupole moments of short-lived nuclei produced as fast rare isotope beams. This system enables quick and sequential…
The ferroelectric material usually exhibits temperature dependent spontaneous polarization, known as pyroelectricity, which can be used to directly convert thermal energy to electricity from ambient low-grade waste heat. When utilizing the…
Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with…
Wide band gap materials are particularly relevant at high temperatures. The band gap shrinkage at higher temperatures prevents device applications with narrow band gap semiconductors. Considering $\alpha$-phase strontium cyanurate as a…
Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes…
Terahertz spintronic devices combine ultrafast operation with low power consumption, making them strong candidates for next-generation memory technologies. In this study, we use time-domain terahertz emission spectroscopy to investigate…