Related papers: Monolithic CMOS Pixel R&D for the ILC at LBNL

Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…

During the Long Shutdown 2 of the LHC in 2018/2019, the ALICE experiment plans the installation of a novel Inner Tracking System. It will replace the current six layer detector system with a seven layer detector using Monolithic Active…

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC…

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve…

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process,…

In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a…

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously…

Within the EUDET consortium a high resolution pixel beam telescope is being developed. The telescope consists of up to six planes of monolithic active pixel sensors. A flexible data acquisition environment is available for the telescope and…

The CMS inner pixel detector system is planned to be replaced during the first phase of the LHC luminosity upgrade. The plans foresee an ultra low mass system with four barrel layers and three disks on either end. With the expected increase…

The Compact Muon Solenoid (CMS) detector is one of two general-purpose detectors that measure the products of high energy particle interactions in the Large Hadron Collider (LHC) at CERN. The silicon pixel detector is the innermost…

The importance of collimator R&D with test beam facilities is demonstrated with the example of ILC collimator studies at SLAC End Station A. Related LHC collimator aspects and longer term plans are addressed.

The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection…

We report results on a tracking performance study performed using a beam telescope made of 50 micron-thick CMOS pixel sensors on the 1.5 GeV electron beam at the LBNL ALS.

We report on developing, characterizing, and verifying a compact, monolithic laser interferometric assembly designed for high-precision two- and three-axis displacement measurements in coordinate positioning systems. The design targets OEM…

The upgrade for ATLAS detector will undergo different phase towards super-LHC. The first upgrade for the Pixel detector will consist of the construction of a new pixel layer which will be installed during the first shutdown of the LHC…

The Pixel Luminosity Telescope is a silicon pixel detector dedicated to luminosity measurement at the CMS experiment at the LHC. It is located approximately 1.75 m from the interaction point and arranged into 16 "telescopes", with eight…

High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking…

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry…

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…

In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…