Related papers: Strain induced half-metal to semiconductor transit…
Chemical pressure is an effective method to tune physical properties, particularly for diluted magnetic semiconductors (DMS) of which ferromagnetic ordering is mediated by charge carriers. Via substitution of smaller Ca for larger Sr, we…
Applying external strain is an efficient way to manipulate the site preference of dopants in semiconductors, however, the validity of the previous continuum elastic model for the strain influence on the doping forma- tion energy is still…
We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing…
Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…
Chemical substitution plays a key role in controlling the electronic and magnetic properties of complex materials. For instance, in EuO, carrier doping can induce a spin-polarized metallic state, colossal magnetoresistance, and…
The mechanism behind ferromagnetic exchange interaction in GdN is not well understood. It has been argued that it can be due to fourth order cross process of \textit{d-f} mixing and \textit{d-f} exchange. An alternative explanation suggests…
Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of…
We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga$_{1-x}$Mn$_x$As. In our…
A lattice spin-fermion model for diluted magnetic semiconductors (DMS) is investigated numerically, improving on previously used mean-field (MF) approximations. Curie temperatures are obtained varying the Mn-spin x and hole n densities, and…
Experimental data show that under pressure, Gd goes through a series of structural transitions hcp to Sm-type (close-packed rhombohedral) to dhcp that is accompanied by a gradual decrease of the Curie temperature and magnetization till the…
GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical…
This work presents results for the magnetic properties of the compound GeTe doped with 3d transition metals V, Cr and Mn from the viewpoint of potential application in spintronics. We report a systematic density-functional study of the…
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition…
We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings…
We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…
The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni doping have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear…
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…
To understand the halfmetallic ferromagnet EuB6 we use the Kondo lattice model for valence and conduction band. By means of a recently developed many-body theory we calculate the electronic properties in the ferromagnetic regime up to the…
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese…
We use supercell and frozen-magnon approaches to study the dependence of the magnetic interactions in (Ga,Mn)As on the Mn concentration. We report the parameters of the exchange interaction between Mn spins and the estimates of the Curie…