Related papers: Optical modulation at around 1550 nm in a InGaAlAs…
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum…
We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in…
We investigate plasmonic modulators with a gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal-semiconductor-metal (MSM) waveguides with InGaAsP-based active…
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and…
We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high…
Inter-modal coupling in photonic bandgap optical channels in magnetic films is used to leverage the transverse-electric (TE) to transverse-magnetic (TM) mode conversion due to the Faraday Effect. The underlying mechanism is traced to the…
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and…
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative.…
We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics…
We investigate linear resonant absorption by a dense ensemble of molecules confined to a subwavelength layer in two geometries: (i) a free-standing film in homogeneous space and (ii) the same film placed at a controlled distance from a…
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors emerging promising applications in diverse optoelectronic devices. To improve performance, recent investigations have been systematically focused on the tuning…
Directive optical leaky wave antennas (OLWAs) with tunable radiation pattern are promising integrated optical modulation and scanning devices. OLWAs fabricated using CMOS-compatible semiconductor planar waveguide technology have the…
We report on a giant Faraday effect in an electron plasma in n-InSb probed via polarization-resolved terahertz (THz) time-domain spectroscopy. Polarization rotation angles and ellipticities reach as large as {\pi}/2 and 1, respectively,…
A new nano-cell with smoothly varying longitudinal thickness of the atomic vapour layer L in the range of 350 - 5100 nm allowing to study the resonant absorption of D1 and D2 lines of Cs atoms for thicknesses changing from L = Lambda/2 to L…
A multilayer GaAs/AlAs heterostructure forming a Fabry--Perot microcavity with a narrow resonance at 1.1~$\mu$m was produced by molecular-beam epitaxy. Under nanosecond pulsed laser radiation, a blue shift of the resonant line, associated…
We have observed marked transport anisotropy in short period (a=92 nm) unidirectional lateral superlattices around filling factors nu=5/2 and 7/2: magnetoresistance shows a sharp peak for current along the modulation grating while a dip…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…
Applications relying on mid-infrared radiation (Mid-IR, $\lambda\sim$ 3-30 $\mu$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of…
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these…
Tuning the spatial extent of directional thermal emission across an arbitrary, and fixed spectral bandwidth is a fundamentally enabling capability for a range of emerging applications such as thermophotovoltaics, thermal imaging, and…