Related papers: Electron Conditioning of Technical Aluminium Surfa…
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick…
In the beam pipe of the positron Main Damping Ring (MDR) of the Next Linear Collider (NLC), ionization of residual gases and secondary electron emission give rise to an electron cloud which can cause the loss of the circulating beam. One…
Conductivity and field effect measurements in thin insulating Al granular films are reported. The occurrence of a symmetrical field effect and of very slow conductance relaxations is demonstrated. They are identical to the electron glassy…
Effects of iodine annealing to induce bulk superconductivity in Fe1+yTe0.6Se0.4 have been systematically studied by changing the molar ratio of iodine to the sample and annealing temperature. The optimal condition to induce bulk…
I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both…
Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under…
We discuss the progress made on a new installation in Fermilab's Main Injector that will help investigate the electron cloud phenomenon by making direct measurements of the secondary electron yield (SEY) of samples irradiated in the…
We discuss the influence of the electromagnetic environment and the electron-electron interaction on the weak localization correction to the conductivity of a disordered metal. The theory of this phenomenon for sufficiently high…
Passivating solid-electrolyte interphase (SEI) films arising from electrolyte decomposition on low-voltage lithium ion battery anode surfaces are critical for battery operations. We review the recent theoretical literature on electrolyte…
The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the…
We investigated the impact of surface oxygen on the ion yield for He$^+$ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion…
The current work studies the effect of sintering conditions on the densification behavior, microstructure, and electrochemical performance of 6 mol% Sc2O3, 1 mol% CeO2 co-doped ZrO2 (6Sc1CeZr) for solid-state electrolyte applications. The…
A new Sesame-type table for the electrical conductivity of aluminum is described. The table is based on density functional theory calculations and ranges from 0.001 to 1 times solid density (2.7 g/cm^3 ), and from 0.01 to 1000 eV in…
Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a…
Antiprotons in Fermilab's Recycler ring are cooled by a 4.3 MeV, 0.1 - 0.5 A DC electron beam (as well as by a stochastic cooling system). The unique combination of the relativistic energy ({\gamma} = 9.49), an Ampere - range DC beam, and a…
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time…
We investigate multi-electron effects in strong-field ionization of Helium using a semi-classical model that, unlike other commonly used theoretical approaches, takes into account electron-electron correlation. Our approach has an…
SiAlON is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes (LEDs). In this work, the electronic structure of a series of semiordered and disordered SiAlON systems is investigated by means of…