Related papers: IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems

IDeF-X HD is a 32-channel analog front-end with self-triggering capability optimized for the readout of 16 x 16 pixels CdTe or CdZnTe pixelated detectors to build low power micro gamma camera. IDeF-X HD has been designed in the standard AMS…

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout…

Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of…

We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a…

We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency…

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems…

We developed a new front-end application specific integrated circuit (ASIC) for the upgrade of the Maia x-ray microprobe. The ASIC instruments 32 configurable front-end channels that perform either positive or negative charge amplification,…

We have developed a large CdTe pixel detector with dimensions of 23.7 x 13.0 mm and a pixel size of 448 x 448 um^2. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud…

We report on the design and performance of a mixed-signal application specific integrated circuit (ASIC) dedicated to avalanche photodiodes (APDs) in order to detect hard X-ray emissions in a wide energy band onboard the International Space…

Compact multi-channel radiation detectors rely on low noise front-end application specific integrated circuits (ASICs) to achieve high spectral resolution. Here, a new ASIC developed to readout virtual Frisch-grid cadmium zinc telluride…

We have developed a new set of Application-Specific Integrated Circuits (ASICs) of the TARGET family (CTC and CT5TEA), designed for the readout of signals from photosensors in cameras of Imaging Atmospheric Cherenkov Telescopes (IACTs) for…

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high…

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration…

The ForwArd Search ExpeRiment (FASER) is an experiment searching for new light and weakly-interacting particles at CERN's Large Hadron Collider. FASER is composed of different sub-detectors, including silicon microstrip detectors,…

A front end ASIC (BiCMOS-SiGe 0.35 \mum) has been developed within the framework of the MIMAC detector project, which aims at directional detection of non-baryonic Dark Matter. This search strategy requires 3D reconstruction of low energy…

New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present…

The Astrophysics Division of CEA Saclay has a long history in the development of CdTe based pixelated detection planes for X and gamma-ray astronomy, with time-resolved imaging and spectrometric capabilities. The last generation, named…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…

\textit{Topmetal-${II}^-$} is a low noise CMOS pixel direct charge sensor with a pitch of 83$\mu m$. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build…

Diffuse X-ray Explorer (DIXE) is a proposed X-ray spectroscopic survey experiment for the China Space Station. Its detector assembly (DA) contains the transition edge sensor (TES) microcalorimeter and readout electronics based on the…