Related papers: Mode Competition in Gas and Semiconductor Lasers
We derive the photocount statistics of the radiation emitted from a chaotic laser resonator in the regime of single-mode lasing. Random spatial variations of the resonator eigenfunctions lead to strong mode-to-mode fluctuations of the laser…
The inevitable random frequency differences among semiconductor lasers present an obstacle to achieving their collective coherence, but previous worked showed that fully (all-to-all) coupled networks can still be synchronized even in the…
The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…
Single mode lasing is experimentally demonstrated in a transversely multi-moded InP-based semiconductor microring arrangement. In this system, mode discrimination is attained by judiciously utilizing the exceptional points in a parity-time…
Because surface plasmons can be confined below the diffraction limit, metallic lasers that support plasmonic modes can provide miniaturized sources of electromagnetic waves. Such devices often exploit a multilayer design, in which a…
The impact of stochasticity effects (SEs) in photon emissions on the proton energy spectra during laser-plasma interaction is theoretically investigated in the quantum radiation-dominated regime, which may facilitate SEs experimental…
When light travels through strongly scattering media with optical gain, the synergy between diffusive transport and stimulated emission can lead to lasing action. Below the threshold pump power, the emission spectrum is smooth and…
The multiple lobes of high order Hermite-Gaussian (HG) laser modes differ in terms of shape, size, and optical energy distribution. Here, we introduce a generic numerical method that redistributes optical energy among the lobes of high…
We present here a semiconductor injection laser operating in continuous wave with an emission covering more than one octave in frequency, and displaying homogeneous power distribution among the lasing modes. The gain medium is based on a…
We show that the emission of broad area semiconductor amplifiers and lasers can be efficiently stabilized by introducing, two-dimensional periodic modulations simultaneously on both the refractive index and the pump (gain-loss) profiles, in…
Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower…
We introduce modeling and simulation of the noise properties associated with types of modal oscillations induced by scaling the asymmetric gain suppression (AGS) in multimode semiconductor lasers. The study is based on numerical integration…
In this paper, we report a theoretical study of the phase diffusion in a gain-switched single-mode semiconductor laser. We use stochastic rate equations for the electrical field to analyze the phase statistics of the gain-switched laser.…
The processes of energy gain and redistribution in a dense gas subject to an intense ultrashort laser pulse are investigated theoretically for the case of high-pressure argon. The electrons released via strong-field ionization and driven by…
We have measured the spectral correlations and intensity statistics of random lasing modes in weakly scattering systems, and compared them to those of the amplified spontaneous emission spikes. Their dramatic differences revealed the…
Plasmonic distributed-feedback lasers based on a two-dimensional periodic array of metallic nanostructures are the main candidate for nanoscale sources of coherent electromagnetic field. Strong localization of the electromagnetic field and…
Lasers can exhibit nonlinear and chaotic dynamics driven by the interaction of multiple lasing modes, and investigating the different scenarios of mode competition and bifurcations of their dynamics is of great interest on a fundamental…
Dynamics of external cavity semiconductor lasers is known to be a complex and uncontrollable phenomenon. Due to the lack of experimental studies on the nature of the external cavity semiconductor lasers, there is a need to theoretically…
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and…
The characteristics of mid-infrared laser diodes have been investigated before and after the patterning of sub-wavelength metallic apertures on the emitting facet. Before modification of the facet the emitted spectrum consisted of a large…