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By means of ab initio molecular dynamics and band structure calculations, as well as using calculated STM images, we have singled out one structural model for the (3x2) reconstruction of the Si-terminated (001) surface of cubic SiC, amongst…

Materials Science · Physics 2009-10-31 L. Pizzagalli , A. Catellani , G. Galli , F. Gygi , A. Baratoff

We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruction. We propose a complete model for the reconstructed…

mtrl-th · Physics 2009-10-30 Steven C. Erwin , Alison A. Baski , Lloyd J. Whitman

The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution…

Materials Science · Physics 2010-11-23 L. V. Arapkina , V. A. Yuryev , V. M. Shevlyuga , K. V. Chizh

At a given temperature, clean and adatom covered silicon surfaces usually exhibit well-defined reconstruction patterns. Our finite temperature ab-initio molecular dynamics calculations show that the tellurium covered Si(001) surface is an…

Materials Science · Physics 2009-11-07 Prasenjit Sen , S. Ciraci , Inder P. Batra , C. H. Grein

The c(6x2) is a reconstruction of the SrTiO3(001) surface that is formed between 1050-1100oC in oxidizing annealing conditions. This work proposes a model for the atomic structure for the c(6x2) obtained through a combination of results…

The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnelling microscopy (STM) and reflected high energy electron…

Materials Science · Physics 2011-11-11 Larisa V. Arapkina , Vladimir M. Shevlyuga , Vladimir A. Yuryev

Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas…

We present here a comprehensive search for the structure of the Si(553)-Au reconstruction. More than two hundred different trial structures have been studied using first-principles density-functional calculations with the SIESTA code. An…

Materials Science · Physics 2009-11-13 Sampsa Riikonen , Daniel Sanchez-Portal

The adsorption of CO on unreconstructed and reconstructed Ir{100} has been studied, using a combination of density functional theory and thermodynamics, to determine the relative stability of the two phases as a function of CO coverage,…

Materials Science · Physics 2009-11-13 Prasenjit Ghosh , Shobhana Narasimhan , Stephen J. Jenkins , David A. King

A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we…

The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly…

Mesoscale and Nanoscale Physics · Physics 2015-03-16 V. P. LaBella , Z. Ding , D. W. Bullock , C. Emery , P. M. Thibado

Although unstable, the Si(337) orientation has been known to appear in diverse experimental situations such as the nanoscale faceting of Si(112), or in the case of miscutting a Si(113) surface. Various models for Si(337) have been proposed…

Materials Science · Physics 2007-05-23 F. C. Chuang , C. V. Ciobanu , C. Z. Wang , K. M. Ho

Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a…

Materials Science · Physics 2009-11-13 C. V. Ciobanu , F. C. Chuang , D. E. Lytle

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable…

Chemical Physics · Physics 2009-11-07 Akihiro Ohtake , Shiro Tsukamoto , Markus Pristovsek , Nobuyuki Koguchi , Masashi Ozeki

We discuss a generalization of the surface reconstruction arguments for the structure of intermediate size Si clusters, which leads to model geometries for the sizes 33, 39 (two isomers), 45 (two isomers), 49 (two isomers), 57 and 61 (two…

Materials Science · Physics 2009-10-30 Efthimios Kaxiras

Recent experimental studies have shown that well-annealed, unstrained Si(105) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy (STM). We construct new models for the Si(105) surface that are…

Condensed Matter · Physics 2009-11-10 C. V. Ciobanu , V. B. Shenoy , C. Z. Wang , K. M. Ho

We recently proposed a new structural model for the Si(331)-(12x1) surface reconstruction containing silicon pentamers as elementary structural building blocks. Using first-principles density-functional theory we here investigate the…

Materials Science · Physics 2010-01-31 Corsin Battaglia , Katalin Gaal-Nagy , Giovanni Onida , Philipp Aebi

LEED experiments show that Li adsorbed at Cu(100) surfaces at room temperature induces a (2x1) missing row substrate reconstruction while adsorption at lower temperatures, T=180 K, results in an unreconstructed Cu(100)+c(2x2)--Li overlayer…

mtrl-th · Physics 2009-10-30 S. Quassowski , K. Hermann

In this article we report the results of global structural optimization of the Si(114) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface…

Materials Science · Physics 2009-11-10 F. C. Chuang , C. V. Ciobanu , C. Predescu , C. Z. Wang , K. M. Ho

We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to mimic the actual deposition process under the best…

Materials Science · Physics 2026-02-24 Marica Licciardi , Aldo Ugolotti , Emilio Scalise , Leo Miglio
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