Related papers: Structure and Stability of Si(114)-(2x1)
We describe the GIT compactification of the moduli of (2,2)-type effective divisors of $\mathbb{P}^1\times\mathbb{P}^2$ (i.e., surfaces of the linear system $\vert \pi_1^*\mathcal{O}_{\mathbb{P}^1}(2)\otimes…
We report the crystal structures and superconductivity (SC) of LaPt$_{x}$Si$_{2-x}$ ($0.5 \leq x \leq 1.0$) that are solid solutions of LaSi$_{2}$ and LaPtSi with centrosymmetric tetragonal ($I4_{1}/amd$, $D_{4h}^{19}$, \#141) and…
The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from…
Based on first-principles calculation we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon…
Topological insulators support metallic surface states whose existence is protected by the bulk band structure. It has been predicted early that the topology of the surface state Fermi contour should depend on several factors, such as the…
We start by reviewing our previous work on retrograde orbital configurations and on modeling and identifying retrograde resonances. Then, we present new results regarding the enhanced stability of retrograde configurations with respect to…
The (111), (110), and (001) surfaces properties of PuO2 are studied by using density-functional theory+U method. The total-energy static calculations determine the relative order of stability for low-index PuO2 surfaces, namely,…
Owing to the natural compatibility with current semiconductor industry, silicon allotropes with diverse structural and electronic properties provide promising platforms for the next-generation Si-based devices. After screening 230…
The topological characteristics of Bi and its alloys with Sb have fueled intense debate since the prediction of three-dimensional topological insulators. However, a definitive resolution has not been reached to date. Here, we provide…
Recently determined atomistic scale structures of near-two dimensional bilayers of vitreous silica (using scanning probe and electron microscopy) allow us to refine the experimentally determined coordinates to incorporate the known local…
Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number…
We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron…
The relative thermodynamic stability of surface reconstructions including vacancies, adatoms and additional layers on both CaO and MnO$_{2}$ terminations is calculated to predict the surface phase diagram of…
The compactification $\overline M_{1,3}$ of the Gieseker moduli space of surfaces of general type with $K_X^2 =1 $ and $\chi(X)=3$ in the moduli space of stable surfaces parametrises so-called stable I-surfaces. We classify all such…
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi…
Epitaxial SrTiO$_3$ (STO) on Si is nowadays the benchmark initial platform for the further addition of functional oxides on Si. Starting the growth of STO on a Sr-passivated Si substrate with 1/2 monolayer (ML) Sr coverage and a (1 $\times$…
Stability of electro-hydrodynamic processes between ion-exchange membranes is investigated. Solutions of the equilibrium problem are commonly described in the one-dimensional (1D) steady-state approximation. In the present work, a novel…
We present ab initio local-density-functional electronic structure calculations for the (111) and (-1-1-1) surfaces of cubic BN. The energetically stable reconstructions, namely the N adatom, N3 triangle models on the (111), the (2x1),…