Related papers: Localization and band-gap pinning in semiconductor…
We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are…
We study both analytically and numerically phonon transmission fluctuations and localization in partially ordered superlattices with correlations among neighboring layers. In order to generate a sequence of layers with a varying degree of…
We study the effect of fluctuations on the {\bf ac} conductivity of a layered superconductor both for $c$-axis and $ab$-plane electromagnetic wave polarizations. The fluctuation contributions of different physical nature and signs…
Superconductivity in alkali-intercalated iron selenide, with T_c's of 30K and above, may have a different origin than that of the other Fe-based superconductors, since it appears that the Fermi surface does not have any holelike sheets…
Semiconductor superlattices may display dispersions that are degenerate either at the zone center or zone boundary. We show that they are linear upon the wave-vector in the vicinity of the crossing point. This establishes a realisation of…
We study the effects of charge polarization on the extended physical properties of superlattices, such as transmission coefficients and valence band structure. We consider both linear and parabolic modulation of the band edge. Based on the…
Graphene antidot lattices have recently been proposed as a new breed of graphene-based superlattice structures. We study electronic properties of triangular antidot lattices, with emphasis on the occurrence of dispersionless (flat) bands…
We consider rectangular graph superlattices of sides l1, l2 with the wavefunction coupling at the junctions either of the delta type, when they are continuous and the sum of their derivatives is proportional to the common value at the…
Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescence (PL) and transmission electron microscopy (TEM)…
The linear combination of bulk bands method recently introduced by Wang, Franceschetti and Zunger [Phys. Rev. Lett.78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)$_n$/(AlAs)$_n$ and…
Spatial fluctuations of the effective pairing interaction between electrons in a superconductor induce variations of the order parameter which in turn lead to significant changes in the density of states. In addition to an overall reduction…
The experimentally observed order-of-magnitude reduction in the thermal conductivity along the growth axis of (GaAs)_n/(AlAs)_n (or n x n) superlattices is investigated theoretically for (2x2), (3x3) and (6x6) structures using an accurate…
We have studied a 50/50\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the…
Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the…
We demonstrate that in pair plasma weakly nonlinear electromagnetic waves, $a_0 \leq 1$, experience Anderson self-localization. The beat between the driver and a back-scattered wave creates charge-neutral, large random density fluctuations…
Symmetry and localization properties of defect modes of a one-dimensional bi-component magnonic superlattice are theoretically studied. The magnonic superlattice can be seen as a periodic array of nanostripes, where stripes with different…
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
We explore the role of phase fluctuations in a 3-dimensional s-wave superconductor, NbN, as we approach the critical disorder for the destruction of the superconducting state. Scanning tunneling spectroscopy measurements reveal that in the…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…