Related papers: Metallic low-temperature resistivity in 2D over an…
Measurements of magnetoresistance and magnetization were carried out on ceramic samples of La_{0.5}Pb_{0.5}MnO_{3} and La_{0.5}Pb_{0.5}MnO_{3}, containing 10 at. % Ag in a dispersed form. The results obtained for the resistivity at zero…
Metallic phases have been observed in several disordered two dimensional (2d) systems, including thin films near superconductor-insulator transitions and quantum Hall systems near plateau transitions. The existence of 2d metallic phases at…
Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned…
We study the dc resistivity of UNi2Al3 thin films as a function of temperature and magnetic field. We focus on the temperature range around the antiferromagnetic transition (TN \approx 4 K in zero applied field). From a clear signature of…
Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers.…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
Characterization of diamond-like carbon (DLC) coatings at cryogenic temperatures (down to 77 K) is presented, covering the electrical resistivity range of practical interest to gaseous and liquid particle instrumentation: 10^-1-10^5…
Quench-condensed granular Al films, with normal-state sheet resistance close to 10 k$\Omega/\Box$, display strong hysteresis and ultraslow, non-exponential relaxation in the resistance when temperature is varied below 300 mK. The hysteresis…
The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order…
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high…
This study reveals a previously unreported phenomenon: elastic softening of synthetic diamonds at temperatures below 1 K. We present ultrasonic measurements on single-crystalline, non-irradiated synthetic diamonds--namely, type-IIa…
The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…
The electrical conductivity and Raman spectroscopy measurements have been performed on MoS$_2$ at high pressures up to 90 GPa and variable temperatures down to 5 K. We find that the temperature dependence of the resistance in a metallic…
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and…
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic…
We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic…
By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single…
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…