Related papers: Strain in heteroepitaxial growth
We have studied the island size distribution and spatial correlation function of an island growth model under the effect of an elastic interaction of the form $1/r^{3}$. The mass distribution $P_n(t)$ that was obtained presents a pronounced…
The steering effect on the growth of islands is investigated by combining molecular dynamics (MD) and kinetic Monte Carlo (KMC) simulations. Dynamics of depositing atoms and kinetics of atoms on a substrate are realized by MD and KMC,…
We study one-dimensional models of particle diffusion and attachment/detachment from islands where the detachment rates gamma(m) of particles at the cluster edges increase with cluster mass m. They are expected to mimic the effects of…
We investigate the formation and the coarsening dynamics of islands in a strained epitaxial semi-conductor film. These islands are commonly observed in thin films undergoing a morphological instability due to the presence of the elasto…
Lattice mismatch of Cu on Ag(111) produces fast diffusion for special "magic sizes" of islands. A size- and shape-dependent reptation mechanism is responsible for low diffusion barriers. Initiating the reptation mechanism requires a…
We investigate the kinetics of submonolayer epitaxial growth which is driven by a fixed flux of monomers onto a substrate. Adatoms diffuse on the surface, leading to irreversible aggregation of islands. We also account for the effective…
A static variational model for shape formation in heteroepitaxial crystal growth is considered. The energy functional takes into account surface energy, elastic misfit-energy and nucleation energy of dislocations. A scaling law for the…
We study the morphological evolution of strained islands in growing crystal films by use of a continuum description including wetting, elasticity and deposition flux. Wetting breaks translational invariance, allowing the flux to tune…
Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy (STM) at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island…
The formation of dislocation-free three-dimensional islands during the heteroepitaxial growth of lattice-mismatched materials has been observed experimentally for several material systems. The equilibrium shape of the islands is governed by…
The theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants…
A model that describes self diffusion, island nucleation and film growth on FCC(001) metal substrates is presented. The parameters of the model are optimized to describe Cu diffusion on Cu(001), by comparing activation energy barriers to a…
Molecular beam epitaxy (MBE) is an epitaxy method for thin film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the…
We consider two sequential models of deposition and aggregation for particles. The first model (No Diffusion) simulates surface diffusion through a deterministic capture area, while the second (Sequential Diffusion) allows the atoms to…
Stress or strain analysis for each atom around structural defects in a crystal is difficult. We propose a new analytical approach based on the eminent Embedding Atom Method(EAM) potential. We observe that the ratio $R$ between the repulsive…
Deposition/removal of metal atoms on the hex reconstructed (100) surface of Au, Pt and Ir should present intriguing aspects, since a new island implies hex -> square deconstruction of the substrate, and a new crater the square -> hex…
Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers…
We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of…
We consider a two-phase elastic solid subject to diffusion-induced phase transformation by an interstitial species provided by a reservoir. We derive a simple analytical model to quantify the effect of misfit strain on the kinetic of phase…
We study numerically the equilibrium shapes, shape transitions and dislocation nucleation of small strained epitaxial islands with a two-dimensional atomistic model, using simple interatomic pair potentials. We first map out the phase…