Related papers: On Anisotropic Transport in High Landau Levels
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…
We consider the edge and bulk conductances for 2D quantum Hall systems in which the Fermi energy falls in a band where bulk states are localized. We show that the resulting quantities are equal, when appropriately defined. An appropriate…
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…
At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $\nu$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the…
Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep…
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction.…
We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic}…
We discuss the behaviour of a quantum Hall system when two Landau levels with opposite spin and combined filling factor near unity are brought into energetic coincidence using an in-plane component of magnetic field. We focus on the…
We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and hopping transport were investigated in the integer quantum…
We report the observation of an acute sensitivity of the anisotropic longitudinal resistivity of two-dimensional electron systems in half-filled high Landau levels to the magnitude and orientation of an in-plane magnetic field. In the third…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…
A two-layer system coupled via tunneling and with different carrier masses in each layer is investigated in the integer quantum Hall regime. Striking deviations of the one-layer Hall conductivity from the usual quantization are found, if…
Recent magneto-transport experiments on ultra-high mobility 2D electron systems in GaAs/AlGaAs heterostructures have revealed the existence of whole new classes of correlated many-electron states in highly excited Landau levels. These new…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
Physical properties of anisotropic compressible quantum Hall states and their implications to integer quantum Hall effect are studied based on a mean field theory on the von Neumann lattice. It is found that the Hall gas has unusual…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…
In a recent letter M. Lilly et al [PRL 82, 394 (1999)] have shown that a highly anisotropic state can arise in certain two dimensional electron systems. In the large square samples studied, resistances measured in the two perpendicular…
In this note, we prove the equality of the quantum bulk and the edge Hall conductances in mobility edges and in presence of disorder. The bulk and edge perturbations can be either of electric or magnetic nature. The edge conductance is…