Related papers: A simple solid-on-solid model of epitaxial thin fi…
We examine the dynamics of a thin film formed by a distributed liquid source on a vertical solid wall. The model is derived using the lubrication approximation and includes the effects of gravity, upward airflow and surface tension. When…
This paper addresses a two-dimensional sharp interface variational model for solid-state dewetting of thin films with surface energies, introduced by Wang, Jiang, Bao, and Srolovitz in \cite{jiang2016solid}. Using the $H^{-1}$-gradient flow…
Light diffusion is usually associated with thick, opaque media. Indeed, multiple scattering is necessary for the onset of the diffusive regime and such condition is generally not met in almost transparent media. Nonetheless, at long enough…
In this paper we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows to understand many experiments of thin film deposition. In the first…
Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic…
The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…
The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound like…
To study epitaxial thin-film growth, a new model is introduced and extensive kinetic Monte Carlo simulations performed for a wide range of fluxes and temperatures. Varying the deposition conditions, a rich growth diagram is found. The model…
Roughness and orientational order in thin films of anisotropic particles are investigated using kinetic Monte Carlo simulations on a cubic lattice. Anisotropic next-neighbor interactions between the lattice particles were chosen to mimic…
We report the results of computer simulations of epitaxial growth in the presence of a large Schwoebel barrier on different crystal surfaces: simple cubic(001), bcc(001), simple hexagonal(001) and hcp(001). We find, that mounds coarse by a…
We present here a summary of some recent techniques used for atomistic studies of thin film growth and morphological evolution. Specific attention is given to a new kinetic Monte Carlo technique in which the usage of unique labeling schemes…
We demonstrate the stencil growth of nanoscale patterns using molecular dynamic simulation. A comparison has been made to a film grown by identical conditions without a stencil. It is shown that in the case of nanoscale proximity between…
Thin film growth is investigated in two types of lattice gas models where substrate and film particles are different, expressed by unequal interaction energy parameters. The first is of solid-on-solid type, whereas the second type…
We present a study of the spreading of liquid droplets on a solid substrate at very small scales. We focus on the regime where effective wetting energy (binding potential) and surface tension effects significantly influence steady and…
An investigation of the effect of surface diffusion in random deposition model is made by analytical methods and reasoning. For any given site, the extent to which a particle can diffuse is decided by the morphology in the immediate…
Random deposition model with surface diffusion over several next nearest neighbours is studied. The results agree with the results obtained by Family for the case of nearest neighbour diffusion [F. Family, J. Phys. A 19(8), L441, 1986].…
The roughness of vapor-deposited thin films can display a nonmonotonic dependence on film thickness, if the smoothening of the small-scale features of the substrate dominates over growth-induced roughening in the early stage of evolution.…
I describe a semi-empirical molecular model of the surface attachment kinetics governing ice crystal growth from water vapor as a function of temperature, supersaturation, and crystal mesostructure. An important new hypothesis in this model…
Epitaxial growth methods are a key technology used in producing large-area thin films on substrates but as a result of various factors controlling growth processes the rational optimization of growth conditions is rather difficult.…
We examine the applicability of the continuum model to describe the surface morphology of a hetero-growth system: compositionally-graded, relaxed GeSi films on (001) Si substrates. Surface roughness versus lateral dimension was analyzed for…